j , ij nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 hf/vhf power transistor BLW86 description n-p-n silicon planar epitaxial transistor intended for use in class-a, ab and b operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 v. the transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. matched hpe groups are available on request. it has a 3/8" flange envelope with a ceramic cap. all leads are isolated from the flange. quick reference data r.f. performance up to th = 25 "c mode of operation c.w. (class-b) s.s.b. (class-ab) s.s.b. (class-a) vce v 28 28 26 f mhz 175 1,6-28 1,6-28 pl w 45 5-47,5 (p.e.p.) 17(pe.p) gp db > 7,5 typ. 19 typ. 22 n % > 70 typ. 45 - zj " 0,7+j1,3 - - yl ms 110 -j62 - - d3 db - typ. -30 typ. -42 pin configuration pinning-sot123 fig.1 simplified outline and symbol. pin 1 2 3 4 description collector emitter base emitter nj semi-conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quolitv
hf/vhf power transistor BLW86 ratings limiting values in accordance with the absolute maximum system (iec 134) collector-emitter voltage (vbe = 0) peak value vcesm collector-emitter voltage (open base) vceo emitter-base voltage (open-collector) vebo collector current (average) ic(av) collector current (peak value); f> 1 mhz icm r.f. power dissipation (f > 1 mhz); tmb = 25 c prf storage temperature tstg operating junction temperature tj 10 - fig.2 d.c. soar. 65 v 36 v 4 v 4 a 12 a 105 w -65 to+ 150 jc max. 200 c max. max. max. max. max. max. 100 i continuous dc operation ii continuous r.f. operation iii short-time operation during mismatch fig.3 r.f. power dissipation; vce < 28 v; f > 1 mhz. thermal resistance (dissipation = 45 w; tmb = 83,5 c, i.e. th = 70 c) from junction to mounting base (d.c. dissipation) from junction to mounting base (r.f. dissipation) from mounting base to heatsink rthj-mb(dc) rfh j-mb(rf) rth mb-h 2,65 k/w 1,95 k/w 0,3 k/w
hfa/hf power transistor BLW86 characteristics tj = 25 c unless otherwise specified collector-emitter breakdown voltage vbe = 0; lc = 25 ma collector-emitter breakdown voltage open base; lc= 100 ma emitter-base breakdown voltage open collector; ie = 10 ma collector cut-off current vbe = 0; vce = 36 v second breakdown energy; l = 25 mh; f = 50 hz open base d.c. current gain'1' lc = 2,5 a; vce = 5 v d.c. current gain ratio of matched devices^) lc = 2,5 a; vce = 5 v collector-emitter saturation voltaget1' lc = 7,5 a; ib =1,5 a transition frequency at f = 100 mhz(1' -ie = 2,5 a; vcb = 28 v -ie = 7,5 a; vcb = 28 v collector capacitance at f = 1 mhz ie = la = 0; vcb = 28 v feedback capacitance at f = 1 mhz lc = 100 ma; vce = 28 v collector-flange capacitance note 1. measured under pulse conditions: tp < 200 us; 8 < 0,02. v(br)ces v(br)ceo v(br)ebo ices esbo esbr hfe vces ft ft cre ccf 4 ? 65 v 36 v 4 v 10 ma 8 mj 8 mj typ. 45 10 to 80 < 1,2 typ. 1,5 v typ. 570 mhz typ. 570 mhz typ. 82 pf typ. 54 pf typ. 2 pf fig. 4 typical values; vce = 28 v. vbe hf/vhf power transistor BLW86 package outline flanged ceramic package; 2 mounting holes; 4 leads sot123 a * d 10 mm scale dimensions (millimetre dimensions are derived from the original inch dimensions) f
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